How to exploit ion-induced stress relaxation to grow thick c-BN
films*
P. Ziemann1,**, H.-G. Boyen1, N. Deyneka1, P. Widmayer§, and F.
Banhart2
1Abteilung Festkörperphysik, Universität
Ulm, D-89069 Ulm, Germany; 2ZE Elektronenmikroskopie, Universität
Ulm, D-89069 Ulm, Germany
Abstract: A recently developed procedure is reviewed allowing
thick (>1 mm), high-quality c-BN films (>80 % c-BN) to be grown.
It is based on the observation that compressive stress inevitably present
in such films can be released by medium-energy (some hundred keV) ion
irradiation without destroying the cubic phase.
* Lecture presented at the 15th International Symposium
on Plasma Chemistry, Orléans, France, 9-13 July 2001. Other presentations
are presented in this issue, pp. 317–492.
** Corresponding author.
Page last modified 19 April 2002.
Copyright © 2002 International Union of Pure and Applied Chemistry.
Questions or comments about IUPAC, please contact, the Secretariat.
Questions regarding the website, please contact web
manager.
